PLASTIC INFRARED LIGHT EMITTING DIODE

Description The QEE113 is a 940 nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. Features • λ = 940 nm • Package Type = Sidelooker • Chip Material = GaAs • Matched Photosensor: QSE113 • Medium Wide Emission Angle, 50° • Package Material: Clear Epoxy • High Outp

文件：332.9 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Plastic Infrared Light Emitting Diode

Description The QEE113 is a 940 nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. Features • λ = 940 nm • Package Type = Sidelooker • Chip Material = GaAs • Matched Photosensor: QSE113 • Medium Wide Emission Angle, 50° • Package Material: Clear Epoxy • High Outp

文件：125.71 Kbytes 页数：5 Pages

Fairchild

仙童半导体

GAAS INFRARED EMITTING DIODE

文件：168.69 Kbytes 页数：2 Pages

QT

GaAs 红外发光二极管

QEE113是一款940 nm AlGaAs LED，密封于中等宽角度的塑料侧视封装中。 •l = 940 nm\n•封装类型：侧面可视封装\n•芯片材料 = GaAs\n•匹配的感光器：QSE113\n•中等宽度发射角度，50

ONSEMI

安森美半导体

Package：径向，侧视图；包装：散装 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 940NM 50MA RADIAL

ONSEMI

安森美半导体

Plastic Infrared Light Emitting Diode

Description The QEE113 is a 940 nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. Features • λ = 940 nm • Package Type = Sidelooker • Chip Material = GaAs • Matched Photosensor: QSE113 • Medium Wide Emission Angle, 50° • Package Material: Clear Epoxy • High Outp

文件：125.71 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Package：径向，侧视图；包装：散装 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 940NM 50MA RADIAL

ONSEMI

安森美半导体