Silizium-PIN-Fotodiode Silicon PIN Photodiode

Features ● Especially suitable for applications from 350 nm to 1100 nm ● BPX 65: high photosensitivity ● BPX 66: low reverse current (typ. 150 pA) ● Hermetically sealed metal package (TO-18), suitable up to 125°C1) Applications ● Fast optical sensor of high modulation bandwidth

文件：207.52 Kbytes 页数：4 Pages

SIEMENS

西门子

Silizium-Differential-Fotodiode Silicon Differential Photodiode

Silicon Differential Photodiode Features ●Especially suitable for applications from 400 nm to 1100 nm ●High photosensitivity ●Hermetically sealed metal package (similar to TO-5), suitable up to 125oC1) ●Double diode with extremely high homogeneousness Applications ●Follo

文件：221.09 Kbytes 页数：4 Pages

SIEMENS

西门子

Silizium-PIN-Fotodiode mit Tageslichtsperrfilter

Features ● Especially suitable for applications of 880 nm ● Short switching time (typ. 20 ns) ● 5 mm LED plastic package ● Also available on tape Applications ● IR-remote control of hi-fi and TV sets, video tape recorders, dimmers, remote control of various equipment ● Photointerrupters

文件：85.45 Kbytes 页数：4 Pages

SIEMENS

西门子

Silicon Differential Photodiode

Silicon Differential Photodiode ●Especially suitable for applications from 400 nm to 1100 nm\n●High photosensitivity\n●Hermetically sealed metal package (similar to TO-5), suitable up to 125oC1)\n●Double diode with extremely high homogeneousness\n\nApplications\n●Follow-up controls\n●Edge drives\n●Industrial electronics\n●For cont;

Infineon

英飞凌