α-β-γ−Radiation Detectors

Substrate:                  4600±1400Ωcm\nChip thickness:           381±15µm\nTopside:                   Aluminium contact 1.4µm\n                             Aluminium total cover 0.1µm\nBackside: 0.4µm Au/As\n●Low dark current\n●Low capacitance\n●High breakdown voltage permits operation at full de;

Infineon

英飞凌

慣-棺-款-Strahlungsdetektoren 慣-棺-款-Radiation Detectors

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SIEMENS

西门子

SOT23

INFINEON/英飞凌

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