Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)

Features • Very highly efficient GaAs-LED • DC (with modulation) or pulsed operations are possible • High reliability • High pulse handling capability • Very short switching times (10 ns) • Suitable for surface mounting (SMT) • Available on tape and reel • SFH 4200 same package as SFH 320

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Infineon

英飞凌

SOT23

INFINEON/英飞凌

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