D5V0S1U2WS-7

Marking：Q12；Package：SOD323；1 CHANNEL UNIDIRECTIONAL TVS

Features ProvidesESDProtectionPerIEC61000-4-2Standard: Air±30kV,Contact±30kV 1ChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications CellularHandsets

TPS3808EG125DBVRQ1

Marking：Q125；Package：SOT-23；TPS3808E-Q1 Low-Quiescent-Current, Programmable-Delay Supervisory Circuit for Automotive

1Features •AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:–40°Cto+125°C •Undervoltagemonitoringforpowerrails –Reliablemonitoringwithhighthreshold accuracy(1typical) –Fixedvoltagethresholdoptionsfrom0.9Vto5 V –Adjustablevoltageoption

W25Q128JWKIQ

Marking：Q128J；Package：K；1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI

1.GENERALDESCRIPTIONS TheW25Q128JW(128M-bit)SerialFlashmemoryprovidesastoragesolutionforsystemswithlimitedspace,pinsandpower.The25QseriesoffersflexibilityandperformancewellbeyondordinarySerialFlashdevices.TheyareidealforcodeshadowingtoRAM,executingcodedi

W25Q128JWYIQ

Marking：Q128J；Package：Y；1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI

1.GENERALDESCRIPTIONS TheW25Q128JW(128M-bit)SerialFlashmemoryprovidesastoragesolutionforsystemswithlimitedspace,pinsandpower.The25QseriesoffersflexibilityandperformancewellbeyondordinarySerialFlashdevices.TheyareidealforcodeshadowingtoRAM,executingcodedi

LM2D16P02

Marking：Q1216；Package：DFN2020-6L；P-ChannelEnhancement Mode Power MOSFET

LMQ1216A

Marking：Q1216；Package：DFN2020-6L；P-ChannelEnhancement Mode Power MOSFET

LMS12G06A

Marking：Q12N06；Package：SOP-8；N-ChannelEnhancement Mode Power MOSFET

LMS12N10A

Marking：Q12N10；Package：SOP-8；N-ChannelEnhancement Mode Power MOSFET

W25Q128JVBJQ

Marking：Q128JVBJQ；Package：TFBGA-24；3V 128M-bit serial flash memory with dual/quad spi

W25Q128JVCJQ

Marking：Q128JVCJQ；Package：TFBGA-24；3V 128M-bit serial flash memory with dual/quad spi