General Purpose Transistor

FEATURES Power dissipation PCM:1 W (Tamb=25°C) Collector current ICM :0.6 A Collector-base voltage V(BR)CBO :75V Operating and storage junction temperature range TJ,Tstg: -55°C to +150°C

文件：182.41 Kbytes 页数：4 Pages

SECOS

喜可士

NPN GENERAL PURPOSE AMPLIFIER

文件：276.18 Kbytes 页数：6 Pages

UTC

友顺

NPN General Purpose Amplifier

文件：212.72 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

文件：180.43 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

NPN General-Purpose Amplifier

Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19.

文件：366.08 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

文件：67.42 Kbytes 页数：6 Pages

UTC

友顺

丝印：ZT2222A；Package：SOT-223；Silicon Planar Medium Power Transistor

DESCRIPTION Epitaxial Planar Die Construction.

文件：323.43 Kbytes 页数：3 Pages

SECOS

喜可士

NPN Epitaxial Planar Transistor

Features • High current, max. 600mA • Low voltage, max. 40V • Pb-free package Applications • Switching and linear amplification

文件：174.87 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

文件：67.42 Kbytes 页数：6 Pages

UTC

友顺

NPN Silicon Epitaxial Planar Power Transistor

Features • Halogen and Antimony Free(HAF), RoHS compliant

文件：857.45 Kbytes 页数：5 Pages

HUIXIN

慧芯电子