SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available (PZT2907A)

文件：1.53681 Mbytes 页数：4 Pages

JIANGSU

长电科技

NPN Transistors

■ Features ● Epitaxial planar die construction ● Complementary to PZT2907A

文件：718.27 Kbytes 页数：2 Pages

KEXIN

科信电子

NPN Silicon Switching Transistors

NPN Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: PZT 2907 (PNP) PZT 2907A (PNP)

文件：126.77 Kbytes 页数：6 Pages

SIEMENS

西门子

丝印：ZT2222A；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A)

文件：1.74917 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Power dissipation

FEATURES Power dissipation PCM:1 W (Tamb=25°C) Collector current ICM :0.6 A Collector-base voltage V(BR)CBO :75V Operating and storage junction temperature range TJ,Tstg: -55°C to +150°C

文件：1.13458 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN switching transistor

FEATURES •High current (max. 600 mA) •Low voltage (max. 40 V). APPLICATIONS •Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A.

文件：340.09 Kbytes 页数：8 Pages

NEXPERIA

安世

Plastic-Encapsulate Transistors

FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available (PZT2907A)

文件：379.4 Kbytes 页数：2 Pages

HOTTECH

合科泰

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available (PZT2907A)

文件：126.53 Kbytes 页数：1 Pages

FS

丝印：ZT2222A；Package：SOT223；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.3191 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

GENERAL PURPOSE TRANSISTORS

DESCRIPTION The PZT2222A is available in SOT 223 p ackage FEATURES  P ower Dissipation PCM : 1W (Tamb=25 °C  Collector Current ICM : 0.6A  Collector Base Voltage V(BR)CBO : 75V  Operating and Storage Junction Temperature Range TJ , T STG : 55 °C to 150 °C  Availabl e in SOT 223

文件：1.18374 Mbytes 页数：6 Pages

AITSEMI

创瑞科技