丝印：PZT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：PZTA44；Package：SC-73；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a SOT223 (SC73) Surface-Mounted Device plastic package. 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 400 V) 3. Applications • Telecommunication

文件：781.82 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PZTA44；Package：SC-73；NPN high-voltage transistor

1. General description NPN high-voltage transistor in a SOT223 (SC73) Surface-Mounted Device plastic package. 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 400 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applicati

文件：197.88 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PZTA14；Package：SOT223；NPN Silicon Darlington Transistor

文件：524.98 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：PZTA42；Package：SOT223；NPN Silicon High-Voltage Transistors

文件：523.12 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：ZT2222A；Package：SOT-223；NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

文件：130.5 Kbytes 页数：7 Pages

恩XP

丝印：ZT2222A；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A)

文件：1.74917 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2222A；Package：SOT-223；NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1 • The SOT−223 Package Can be Soldered Using Wave or

文件：113.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：ZT2222A；Package：SOT223；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.3191 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：2222A；Package：SOT-223；NPN General-Purpose Amplifier

Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19.

文件：366.08 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司