丝印：PZTA14；Package：SOT223；NPN Silicon Darlington Transistor

文件：524.98 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：PZTA14；Package：SOT223；NPN Silicon Darlington Transistor

文件：524.98 Kbytes 页数：6 Pages

Infineon

英飞凌

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● High current (max. 500 mA) ● Low voltage (max. 30 V). ● Pre-amplifiers requiring high input impedance.

文件：1.00768 Mbytes 页数：1 Pages

JIANGSU

长电科技

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: PZTA 63 PZTA 64 (PNP)

文件：139.2 Kbytes 页数：4 Pages

SIEMENS

西门子

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A.

文件：55.19 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: PZTA63, PZTA64 (PNP)

文件：42.66 Kbytes 页数：4 Pages

Infineon

英飞凌

Darlington NPN Silicon Planar Epitaxial Transistor

Darlington NPN Silicon Planar Epitaxial Transistor P/b Lead(Pb)-Free

文件：182.72 Kbytes 页数：4 Pages

WEITRON

DARLINGTON TRANSISTOR

DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Power Dissipation: PC(MAX) = 1W

文件：51.2 Kbytes 页数：2 Pages

UTC

友顺

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complement: PZTA64. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • Pre-amplifiers requiring high input impedance.

文件：107.93 Kbytes 页数：7 Pages

恩XP

Epitaxial Planar Transistor

Description The PZTA14 is darlington amplifier transistor designed for applications requiring extremely high current gain.

文件：641.93 Kbytes 页数：2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司