PXP013-30QL

30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inanMLPAK33(SOT8002)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logiclevelcompatible •TrenchMOSFETtechnology •MLPAK33package(3.3x3.3mmf

PSMN013-30LL

N-channel30V13m廓logiclevelMOSFET

PSMN013-30LL

N-channelDFN3333-830V13mΩlogiclevelMOSFET

1.1Generaldescription LogiclevelN-channelMOSFETinDFN3333-8packagequalifiedto150°C.Thisproduct isdesignedandqualifiedforuseinawiderangeofindustrial,communicationsandpower supplyequipment. 1.2Featuresandbenefits Highefficiencyduetolowswitching andconduct

PSMN013-30MLC

N-channel30V13.6m廓logiclevelMOSFETinLFPAK33usingNextPowerTechnology

PSMN013-30YLC

N-channel30V13.6m廓logiclevelMOSFETinLFPAKusingNextPowertechnology