丝印：9AB；Package：SOT8002-1；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Ultra low QG and QGD for high s

文件：332.65 Kbytes 页数：14 Pages

NEXPERIA

安世

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Trench MOSFET technology\n• Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies\n• Superfast switching with soft-recovery\n• Low spiking and ringing for low EMI designs\n• MLPAK33 package (3.3 x 3.3 mm footprint);

Nexperia

安世

N-channel 30 V 17 milliohm logic level MOSFET in D2PAK

文件：198.75 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel 30 V 17 mΩ logic level MOSFET in D2PAK

1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction loss

文件：795.23 Kbytes 页数：14 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.32 Kbytes 页数：2 Pages

ISC

无锡固电