High Power RF LDMOS FET170 W, 28 V, 2110 – 2170 MHz

Broadband internal input and output matching Typical Pulsed CW performance; 2140 MHz; 28 V; single side; class AB test: Output power at P1dB = 172 W; Output power at P3dB = 208 W; Efficiency at P3dB = 64.4%; Gain = 20.3 dB Capable of handling 10:1 VSWR @ 28 V; 120 W (CW) output power Integrated • Broadband internal input and output matching\n•Capable of handling 10:1 VSWR @ 28 V; 120 W (CW) output power\n• Pb-free; RoHS compliant;

MACOM

Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz

Description The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfs

文件：763.41 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz

Description The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfs

文件：763.41 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz

文件：587.63 Kbytes 页数：8 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz

文件：587.63 Kbytes 页数：8 Pages

Cree

科锐

Package：H-37248G-4/2；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：150W, SI LDMOS, 28V, 2110-2170MH

WOLFSPEED

Package：H-37248G-4/2；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：150W, SI LDMOS, 28V, 2110-2170MH

WOLFSPEED