Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz ·Broadband internal input and output matching\n ·Typical pulsed CW performance, 1842.5 MHz, 28 V - Output power at P1dB = 380 W - Efficiency = 54.9% - Gain = 21 dB\n ·Integrated ESD protection\n ·ESD: Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)\n ·Capable of handling 10:1 VSWR @28;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz

文件：196.29 Kbytes 页数：10 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz

文件：196.29 Kbytes 页数：10 Pages

Infineon

英飞凌

IC AMP RF LDMOS

Infineon

英飞凌

Package：H-37275G-6/2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

Infineon

英飞凌