Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 220 W, 28 V, 1805 – 1990 MHz ·Broadband internal input and output matching\n ·Typical Pulsed CW performance, 1880 MHz, 28 V, 10 μs pulse width, 10% duty cycle, single side - Output power at P1dB = 220 W - Efficiency = 56% - Gain = 19 dB\n ·Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01%;

Infineon

英飞凌

QFN

INFINEON/英飞凌

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