PXFC192207NFV1R500中文资料Cellular (1800 MHz to 1995 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 220 W, 28 V, 1805 – 1990 MHz

特性 Features

·Broadband internal input and output matching
·Typical Pulsed CW performance, 1880 MHz, 28 V, 10 μs pulse width, 10% duty cycle, single side - Output power at P1dB = 220 W - Efficiency = 56% - Gain = 19 dB
·Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 64DPCH - Output power = 50 W avg - Efficiency = 34% - Gain = 20 dB - ACPR = –33 dBc @ 5 MHz
·Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power
·Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
·Low thermal resistance
·Package: PG-HBSOF-4, plastic