Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 220 W, 28 V, 1805-1990 MHz ·Broadband input and output matching\n ·Typical Pulsed CW performance, 1990 MHz, 28 V, 16 μs pulse width, 10% duty cycle, class AB  - Output power at P1dB = 220 W - Efficiency = 55% - Gain = 20 dB\n ·Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR - ;

Infineon

英飞凌

High Power RF LDMOS FET220 W, 28 V, 1805 – 1990 MHz

Broadband input and output matchingTypical Pulsed CW performance; 1990 MHz; 28 V; 16 μs pulse width; 10 % duty cycle; class AB: Output power at P1dB = 220 W; Efficiency = 55%; Gain = 20 dBCapable of handling 10:1 VSWR @28 V; 220 W (CW) output powerIntegrated ESD protection: Human Body Model; • Broadband input and output matching\n• Capable of handling 10:1 VSWR @28 V; 220 W (CW) output power\n• Low thermal resistance\n• Pb-free and RoHS compliant\n;

MACOM

包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

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