Thermally-Enhanced High Power RF LDMOS FET

文件：352.25 Kbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB 28 V, 2620 ??2690 MHz

文件：633.86 Kbytes 页数：8 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz

文件：551.46 Kbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz

文件：551.46 Kbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz

文件：551.46 Kbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz

文件：551.46 Kbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ??2690 MHz

文件：551.46 Kbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

Cellular (2300 MHz to 2700 MHz)

High Power RF LDMOS FET, 60W, P3dB @ 28V, 2620-2690MHz ·Main: Input matched Peak: Input and output matching\n ·Asymmetric Doherty design - Main: P1dB = 15 W Typ - Peak: P1dB = 50 W Typ\n ·Typical Pulsed CW performance, 2690 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB, Doherty Configuration - Output power at P1dB = 50 W - Efficiency = 50;

Infineon

英飞凌

High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz

Main: Input matched; Peak: Input and output matchingAsymmetric Doherty design: Main P1dB = 15 W Typ; Peak P1dB = 50 W TypTypical Pulsed CW performance; 2690 MHz; 28 V; class AB; Doherty Configuration: Output power at P1dB = 50 W; Efficiency = 50%; Gain = 15 dBCapable of handling 10:1 VSWR @28 V; • Main: Input matched; Peak: Input and output matching\n• Asymmetric Doherty design: Main P1dB = 15 W Typ; Peak P1dB = 50 W Typ\n• Typical Pulsed CW performance; 2690 MHz; 28 V; class AB; Doherty Configuration: Output power at P1dB = 50 W; Efficiency = 50%; Gain = 15 dB\n• Capable of handling 10;

MACOM