High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz

Main: Input matched; Peak: Input and output matchingAsymmetric Doherty design: Main P1dB = 15 W Typ; Peak P1dB = 50 W TypTypical Pulsed CW performance; 2690 MHz; 28 V; class AB; Doherty Configuration: Output power at P1dB = 50 W; Efficiency = 50%; Gain = 15 dBCapable of handling 10:1 VSWR @28 V; • Main: Input matched; Peak: Input and output matching\n• Asymmetric Doherty design: Main P1dB = 15 W Typ; Peak P1dB = 50 W Typ\n• Typical Pulsed CW performance; 2690 MHz; 28 V; class AB; Doherty Configuration: Output power at P1dB = 50 W; Efficiency = 50%; Gain = 15 dB\n• Capable of handling 10;

MACOM

Package：H-37248-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

WOLFSPEED

Package：H-37248-4；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37248-4

WOLFSPEED

Package：H-37248-4；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

WOLFSPEED