Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz

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INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz

文件：518.73 Kbytes 页数：8 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2200 MHz

Infineon

英飞凌

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 320 W, 28 V, 2110 – 2200 MHz ·Broadband internal input and output matching\n ·Asymmetrical Doherty design - Main : P1dB = 140 W Typ - Peak : P1dB = 190 W Typ\n ·Typical Pulsed CW performance, 2170 MHz, 28 V, combined outputs - Output power at P 3dB = 320 W - Efficiency = 53% @ P 3dB - Gain = 16 dB@ P 3dB\n ·Capable of h;

Infineon

英飞凌

High Power RF LDMOS FET 320 W, 28 V, 2110 – 2200 MHz

The PXAC213308FV is a 320-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2100 to 2200 MHz frequency band. Features include dual-path design, broadband matching, high gain and thermally-enhanced package with earless fl • Broadband internal input and output matching\n• Main : P1dB = 140 W Typ\n• Typical Pulsed CW performance, 2170 MHz, 28 V, combined outputs\n• Efficiency = 53% @ P3dB\n• Capable of handling 10:1 VSWR @ 28 V, 170 W CW output power\n• Low thermal resistance\n• Pb-free and RoHS compliant\n;

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