Thermally-Enhanced High Power RF LDMOS FET

文件：1.21531 Mbytes 页数：9 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz

文件：515.74 Kbytes 页数：9 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FET

文件：1.21531 Mbytes 页数：9 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

High Power RF LDMOS FET 240 W, 28 V, 1805 – 1880 MHz

The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless fl • Broadband internal input and output matching\n• Main : P1dB = 120 W Typ\n• Typical Pulsed CW performance, 1842.5 MHz, 28 V, combined outputs\n• Efficiency = 52.6%\n• Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power\n• Integrated ESD protection\n• Pb-free and RoHS compliant\n;

MACOM

Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 240 W, 28 V, 1805-1880 MHz ·Broadband internal input and output matching\n ·Asymmetrical Doherty design - Main: P1dB = 120 W Typ - Peak: P1dB = 220 W Typ\n ·Typical Pulsed CW performance, 1842.5 MHz, 28 V, combined outputs - Output power at P1dB = 240 W - Efficiency = 52.6% - Gain = 14.5 dB\n ·Capable of handling 10:1 ;

Infineon

英飞凌

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

WOLFSPEED