Cellular (1800 MHz to 1995 MHz)

Thermally-Enhanced High Power RF LDMOS FET, 180 W, 28 V, 1805 – 1880 MHz ·Broadband internal input and output matching\n ·Typical pulsed CW performance, 1880 MHz, 28 V, combined outputs - Output power at P 3dB = 194 W - Efficiency = 64% - Gain = 14 dB\n ·Capable of handling 10:1 VSWR @28 V, 180 W (CW) output power\n ·Integrated ESD protection\n ·Low thermal resi;

Infineon

英飞凌

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

WOLFSPEED