Thermally-Enhanced High Power RF LDMOS FET

文件：1.27013 Mbytes 页数：10 Pages

INFINEON

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Thermally-Enhanced High Power RF LDMOS FET

文件：1.27013 Mbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 60 W, 28 V, 1805 – 1880 MHz ·Broadband internal input and output matching\n ·Asymmetric Doherty design - Main: P1dB = 20 W Typ - Peak: P1dB = 40 W Typ\n ·Typical Pulsed CW performance, 1880 MHz, 28 V, 160 μs pulse width, 10% duty cycle, class AB, Doherty configuration - Output power at P1dB = 10 W - Efficiency = 58% ;

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IC AMP RF LDMOS

Wolfspeed(CREE)

包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

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