PXAC180602MDV1R500中文资料Cellular (1800 MHz to 1995 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 60 W, 28 V, 1805 – 1880 MHz

特性 Features

·Broadband internal input and output matching
·Asymmetric Doherty design - Main: P1dB = 20 W Typ - Peak: P1dB = 40 W Typ
·Typical Pulsed CW performance, 1880 MHz, 28 V, 160 μs pulse width, 10% duty cycle, class AB, Doherty configuration - Output power at P1dB = 10 W - Efficiency = 58% - Gain at P3dB = 19 dB
·Integrated ESD protection
·Human Body Model, Class 1B (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant
·Package: PG-HB1DSO-4