丝印：D3；Package：TSSOP6；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH11-Q PNP/PNP complement: PUMB11-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resi

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Low VCEsat (BISS) transistors

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飞利浦

NPN/PNP resistor-equipped transistors; R1=10kΩ,R2=10kΩ

NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PUMH11-Q\n PNP/PNP complement: PUMB11-Q • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世