PNP resistor-equipped double transistor; R1 = 4.7 kohm

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

文件：52.92 Kbytes 页数：8 Pages

PHI

飞利浦

PNP/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers

文件：137.07 Kbytes 页数：8 Pages

恩XP

丝印：B5；Package：SOT363；PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PN

文件：136.32 Kbytes 页数：8 Pages

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安世

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION NPN/PNP

文件：297.97 Kbytes 页数：8 Pages

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安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages Features ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design Applications ■

文件：76.23 Kbytes 页数：10 Pages

恩XP

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages 1.2 Features 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement NPN/NPN NXP JEITA complement PEMB30 SOT666 - PEMD30 PEMH30 PUMB30 SO

文件：191.09 Kbytes 页数：11 Pages

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安世

丝印：2C；Package：TSSOP6；50 V, 100 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7H NPN/PNP complement: PUMD6H 2. Features and benefits • 100 mA output current capability • Built-in resistors •

文件：240.77 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：2C；Package：TSSOP6；50 V, 100 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7H-Q NPN/PNP complement: PUMD6H-Q 2. Features and benefits • 100 mA output current capability • Built-in resistors

文件：240.91 Kbytes 页数：12 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦