PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages Features ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design Applications ■

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恩XP

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages 1.2 Features 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement NPN/NPN NXP JEITA complement PEMB30 SOT666 - PEMD30 PEMH30 PUMB30 SO

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NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified;

Nexperia

安世