丝印：B2；Package：TSSOP6；50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

1. General description PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD12-Q NPN/NPN complement: PUMH2-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resis

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PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

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PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm

PNP/PNP resistor-equipped transistors • Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place cost\n• AEC-Q101 qualified;

Nexperia

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50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PUMD12-Q\n NPN/NPN complement: PUMH2-Q • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世