Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

Description The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multistandard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability Feature

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WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz

文件：660.25 Kbytes 页数：11 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

Description The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multistandard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability Feature

文件：731.2 Kbytes 页数：11 Pages

WOLFSPEED

High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. • Broadband internal input and output matching\n• Asymmetric design• Main: P1dB = 245 W Typ\n• Peak: P1dB = 380 W Typ\n\n• Typical pulsed CW performance, 805 MHz, 48 V, Doherty configuration• Output power at P3dB = 650 W\n• Efficiency = 52%\n• Gain = 19.5 dB\n\n• Capable of handling 10:1 VSWR @4;

MACOM

High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz

The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability. ·Broadband internal input and output matching\n·Asymmetric design: Main P1dB = 245 W Typ; Peak P1dB = 380 W Typ\n·Typical pulsed CW performance; 805 MHz; 48 V; Doherty configuration: Output power at P3dB = 650 W; Efficiency = 52%; Gain = 19.5 dB\n·Capable of handling 10:1 VSWR @48 V; 30 W (WCDMA;

MACOM

Package：HB2SOF-6-1；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：700W, SI LDMOS, 48V, 790-820MHZ,

WOLFSPEED

Package：HB2SOF-6-1；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC RF AMPLIFIER

WOLFSPEED