Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz

Description The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfs

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WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz

文件：534.55 Kbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 ??820 MHz

文件：604.96 Kbytes 页数：10 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz

Description The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfs

文件：677.37 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz

Infineon

英飞凌

Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET, 280 W, 48 V, 790 – 820 MHz ·Broadband internal input and output matching\n ·Asymmetrical design   - Main : P 1dB = 115 W Typ   - Peak : P 1dB = 165 W Typ\n ·Typical Pulsed CW performance, 820 MHz, 48 V, Doherty configuration   - Output power at P 3dB = 250 W   - Efficiency = 55.6%   - Gain = 16.2 dB\n · Capable of hand;

Infineon

英飞凌

High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz

The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS proce ·Broadband internal input and output matching\n·Asymmetrical design: Main: P1dB = 115 W Typ; Peak: P1dB = 165 W Typ\n·Typical Pulsed CW performance; 820 MHz; 48 V; Doherty configuration: Output power at P3dB = 250 W; Efficiency = 55.6 %; Gain = 16.2 dB\n·Capable of handling 10:1 VSWR @ 48 V; 56.;

MACOM

Package：HBSOF-6-2；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF LDMOS FET 280W, 790 - 820MHZ

WOLFSPEED