PTRA082808NFV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 280 W, 48 V, 790 – 820 MHz

特性 Features

·Broadband internal input and output matching
·Asymmetrical design   - Main : P 1dB = 115 W Typ   - Peak : P 1dB = 165 W Typ
·Typical Pulsed CW performance, 820 MHz, 48 V, Doherty configuration   - Output power at P 3dB = 250 W   - Efficiency = 55.6%   - Gain = 16.2 dB
· Capable of handling 10:1 VSWR @ 48 V, 56.2 W (CW) output power
· Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
· Integrated ESD protection
· Low thermal resistance
· Pb-free and RoHS compliant