Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ??2200 MHz

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INFINEON

英飞凌

Wideband LDMOS Two-stage Integrated Power Amplifier 20 W, 28 V, 1805 ??2200 MHz

文件：1.86027 Mbytes 页数：10 Pages

CREE

科锐

Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 – 2200 MHz

Infineon

英飞凌

RF Power Amplifier ICs

Wideband LDMOS Two-stage Integrated Power Amplifier, 10 W + 10 W, 28 V, 1805 – 2200 MHz ·On-chip matching for broadband operation\n ·Dual independent outputs, 10 W each \n ·Typical pulsed CW performance, 1990 MHz, 28 V, combined outputs - Output power at P 1dB = 20.9 W - Efficiency = 56% - Gain = 31 dB\n ·Capable of handling 10:1 VSWR @28 V, 20.9 W (CW) output power\n ·Integrat;

Infineon

英飞凌

Wideband LDMOS Two-stage Integrated Power Amplifier 20 W, 28 V, 1805 – 2200 MHz

The PTMC210204MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 10 W of output power each. It is available in a 14-lead plastic overmold package with gull wing leads. • On-chip matching for broadband operation\n• Typical pulsed CW performance, 1990 MHz, 28 V, combined outputs\n• Output power at P1dB = 20.9 W\n• Efficiency = 56%\n• Gain = 31 dB\n• Capable of handling 10:1 VSWR @28 V, 20.9 W (CW) output power\n• Integrated ESD protection\n• Human Body Model Cla;

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