PTMA210152MV1中文资料RF Power Amplifier ICs数据手册Infineon规格书

描述 Description

Wideband RF LDMOS Integrated Power Amplifier - 15W, 28V, 1800-2200MHz

特性 Features

·Designed for wide RF bandwidth and low memory effects
·Broadband input on-chip matching 
·Typical two-carrier WCDMA performance at 2140MHz, 28V, 7W avg, - Gain = 28.5dB - Power Added Efficiency = 33% - IMD3 = –32dBc
·Typical CW performance at 2140MHz, 28V - Output power at P1dB ~ 20W - Efficiency > 49%
·Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F
·Capable of handling 10:1 VSWR @ 28 V, 15 W (CW) output power
·Thermally-enhanced RoHS-compliant package

简介

PTMA210152MV1属于RF/IF射频/中频RFID的射频放大器。由制造生产的PTMA210152MV1射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。