PTMA180402MV1数据手册Infineon中文资料规格书

描述 Description

Wideband RF LDMOS Integrated Power Amplifier, 40 W, 28 V, 1800 – 2100 MHz

特性 Features

·Designed for wide RF bandwidth and low memory effects
·Broadband input on-chip matching, integrated input DC block, 50-ohm input and ~4-ohm output
·Typical single-carrier CDMA performance at 1960 MHz, 28 V - Average output power = 5 W - Linear gain = 30 dB - Efficiency = 16%  - ACPR = -52 dBc
·Typical two-tone performance at 1960 MHz, 28 V - Output power (PEP) = 40 W at IMD3 = -30 dBc - Efficiency = 34%
·Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F.
·Capable of handling 10:1 VSWR @ 28 V, 40 W (CW) output power.
·RoHS Compliant
·Package: PG-DSO-20-63, surface mount