PTMA080152MV1数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz

特性 Features

Broadband on-chip matching, 50-ohm input and ~10-ohm output
Typical GSM/EDGE performance at 28 V, 920 to 960 MHz - 30 dB gain, 34% efficiency @ 8 W output power,  - 1.5% EVM @ 8W,  - –61 dBc ACPR @ 400 kHz, - –75 dBc ACPR @ 600 kHz
Typical CW performance, 940 MHz, 28 V: - 20 W P OUT at P1dB, 49% efficiency
Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 20 W (CW) output power
Pb-Free and RoHS-compliant
Package: PG-DSO-20-63, surface mount

简介

PTMA080152MV1属于RF/IF射频/中频RFID的射频放大器。由制造生产的PTMA080152MV1射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。