Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 ??2200 MHz

文件：242.68 Kbytes 页数：15 Pages

INFINEON

英飞凌

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 ??2200 MHz

文件：1.18119 Mbytes 页数：15 Pages

CREE

科锐

Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz

Infineon

英飞凌

RF Power Amplifier ICs

Wideband RF LDMOS Integrated Power Amplifier - 15W, 28V, 1800-2200MHz ·Designed for wide RF bandwidth and low memory effects\n ·Broadband input on-chip matching \n ·Typical two-carrier WCDMA performance at 2140MHz, 28V, 7W avg, - Gain = 28.5dB - Power Added Efficiency = 33% - IMD3 = –32dBc\n ·Typical CW performance at 2140MHz, 28V - Output power at P1dB ~ 20W -;

Infineon

英飞凌

Wideband RF LDMOS Integrated Power Amplifier15 W, 28 V, 1800 – 2200 MHz

The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in a 20-lead thermally enhanced overmolded package for cool and reliable operation.\n • Designed for wide RF bandwidth and low memory effects\n• Typical CW performance at 2140 MHz, 28 V\n• Efficiency > 49%\n• Capable of handling 10:1 VSWR @ 28 V, 15 W (CW) output power\n• Thermally-enhanced RoHS-compliant package\n;

MACOM

Package：20-SOIC（0.433"，11.00mm 宽）裸露焊盘；包装：散装 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP 1.9GHZ-2.2GHZ DSO20-63

INFINEON

英飞凌

Package：20-SOIC（0.433"，11.00mm 宽）裸露焊盘；包装：托盘 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP WCDMA 1.8GHZ-2.2GHZ DSO20

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