Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ??2000 MHz

文件：443.17 Kbytes 页数：11 Pages

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Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ??2000 MHz

文件：443.17 Kbytes 页数：11 Pages

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Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ??2100 MHz

文件：352.86 Kbytes 页数：14 Pages

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Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 ??2100 MHz

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科锐

Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz

文件：494.45 Kbytes 页数：14 Pages

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RF Power Amplifier ICs

Wideband RF LDMOS Integrated Power Amplifier, 40 W, 28 V, 1800 – 2100 MHz ·Designed for wide RF bandwidth and low memory effects\n ·Broadband input on-chip matching, integrated input DC block, 50-ohm input and ~4-ohm output\n ·Typical single-carrier CDMA performance at 1960 MHz, 28 V - Average output power = 5 W - Linear gain = 30 dB - Efficiency = 16%  - ACPR = -5;

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Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz

The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications in the 1800 to 2100 MHz frequency band. This device is offered in a 20-pin, thermally-enhanced, overmolded plastic package for cool and reliable operation. • Designed for wide RF bandwidth and low memory effects\n• On-chip matching, integrated input DC block, 50-ohm input and ~4-ohm output\n• Typical single-carrier CDMA performance at 1960 MHz, 28 V\n• Average output power = 5 W \n• Linear gain = 30 dB\n• Efficiency = 16%\n• Adjacent channel power ;

MACOM

Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz

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Package：H-34265-8；包装：散装 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP CDMA 1.8GHZ-2GHZ H33265-8

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Package：H-34265-8；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP CDMA 1.8GHZ-2GHZ H34265-8

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