High Power RF LDMOS FET300 W, 2110 – 2170 MHz

The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. • Broadband internal matching\n• Enhanced for use in DPD error correction systems\n• Wide video bandwidth\n• Typical single-carrier WCDMA performance at 2170 MHz, 30 V\n• POUT = 49.5 dBm Avg\n• Gain = 17.5 dB\n• Efficiency = 30%\n• Increased negative gate-source voltage range for improved perfor;

MACOM

Package：H-37275-6/2；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37275-6

WOLFSPEED

Package：H-37275-6/2；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS

WOLFSPEED

OMRON/欧姆龙

上传：深圳市英创达电子半导体有限公司

EUT-6

TI/德州仪器

上传：深圳市坤融电子科技有限公司