High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

文件：727.61 Kbytes 页数：18 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

文件：911.94 Kbytes 页数：18 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

文件：649.24 Kbytes 页数：18 Pages

CREE

科锐

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

文件：911.94 Kbytes 页数：18 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

文件：911.94 Kbytes 页数：18 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

文件：911.94 Kbytes 页数：18 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

文件：911.94 Kbytes 页数：18 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz

文件：911.94 Kbytes 页数：18 Pages

INFINEON

英飞凌

High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

Infineon

英飞凌

Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FETs, 340 W, 30 V, 1805 – 1880 MHz ·Broadband input and output matching\n ·Wide video bandwidth\n Typical single-carrier WCDMA performance at 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB,PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz= -37 dBc\n ·Increased negative gate-source voltage ran;

Infineon

英飞凌