Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

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Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 ??1880 MHz

文件：554.23 Kbytes 页数：8 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

Infineon

英飞凌

Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 170 W, 28V, 1805 – 1880 MHz ·Broadband input and output matching\n ·Typical CW performance at 1842 MHz, 28 V - Output power at P1dB = 180 W - Efficiency = 58% - Gain = 18.5 dB\n ·Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power\n ·Integrated ESD protection \n ·Low thermal resistance\n ·Pb-free and Ro;

Infineon

英飞凌

High Power RF LDMOS FET 170 W, 28 V, 1805 – 1880 MHz

The PTFB181702FC is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides exc • Broadband internal matching\n• Output power at P1dB = 180 W\n• Gain = 18.5 dB\n• Capable of handling 10:1 VSWR @28 V, 170 W (CW) output power\n• Low thermal resistance\n• Pb-free and RoHS compliant;

MACOM

Package：H-37248-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC AMP RF LDMOS H-37248-4

WOLFSPEED