Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 170 W, 28V, 1805 – 1880 MHz ·Broadband input and output matching\n ·Typical CW performance at 1842 MHz, 28 V - Output power at P1dB = 180 W - Efficiency = 58% - Gain = 18.5 dB\n ·Capable of handling 10:1 VSWR @ 28 V, 170 W (CW) output power\n ·Integrated ESD protection \n ·Low thermal resistance\n ·Pb-free and Ro;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.00976 Mbytes 页数：8 Pages

INFINEON

英飞凌