PTFA080551FV4中文资料Cellular (700 MHz to 1000 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 55W, 28V, 869 – 960MHz

特性 Features

·Broadband internal matching
·Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Efficiency = 44%
·Typical CW performance - Output power at P1dB = 75 W - Gain = 17 dB - Efficiency = 67%
·Capable of handling 10:1 VSWR @ 28 V, 55 W (CW) output power
·Integrated ESD protection. Human Body Model, Class 2 (minimum)
·Excellent thermal stability, low HCI drift
·Pb-free and RoHS compliant
·Package: H-37265-2, earless