Cellular (1800 MHz to 1995 MHz)

High Power RF LDMOS FET, 190 W, 28 V, 1805 – 1880 MHz ·Asymmetric Doherty Design - Main: P1dB = 70 W Typ - Peak: P1dB = 120 W Typ\n ·Broadband input and output matching\n ·Typical two-carrier WCDMA performance at 1842 MHz, 28 V (Doherty Configuration) - Average output power = 44.6 dBm - Linear Gain = 15.5 dB - Efficiency = 46% - IMD = -25 dBc\;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.0478 Mbytes 页数：13 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.0478 Mbytes 页数：13 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.0478 Mbytes 页数：13 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET

文件：1.0478 Mbytes 页数：13 Pages

Infineon

英飞凌