PTAB182002FCV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 190 W, 28 V, 1805 – 1880 MHz

特性 Features

·Asymmetric Doherty Design - Main: P1dB = 70 W Typ - Peak: P1dB = 120 W Typ
·Broadband input and output matching
·Typical two-carrier WCDMA performance at 1842 MHz, 28 V (Doherty Configuration) - Average output power = 44.6 dBm - Linear Gain = 15.5 dB - Efficiency = 46% - IMD = -25 dBc
·Increased negative gate-source voltage range for improved performance in Doherty amplifiers
·Capable of handling 3:1 VSWR @ 30 V, 50 W avg output power. Single-carrier WCDMA (10 dB PAR), Doherty test fixture.
·Integrated ESD protection
·Pb-free and RoHS compliant
·Package: H-37248-4, earless