400V N-Channel MOSFET

PIPSEMI

丽隽半导体

DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Common Anode Configuration • Lead Free By Design/RoHS Compliant (Note 3) • Green Device (Note 4)

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DIODES

美台半导体

DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

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DIODES

美台半导体

High input impedance

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applica

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Fairchild

仙童半导体