零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SimplePCIBridging | OXFORD OXFORD electrical power | OXFORD | ||
Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
RFFilter | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 | ACT | ||
1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
SMD28PinPassiveDelayLines SMD28PinPassiveDelayLines | PCA PCA Electronics, Inc. | PCA | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
进口原装 |
23+ |
TO-3P |
1524 |
全新原装现货 |
询价 | ||
0 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
0 |
23+ |
NA/ |
883 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RICHTEK |
22+ |
TO223 |
4897 |
绝对原装!现货热卖! |
询价 | ||
RICHTEK |
23+ |
TO223 |
5000 |
原装正品,假一罚十 |
询价 | ||
RICHTEK |
22+ |
TO223 |
10000 |
原装正品优势现货供应 |
询价 | ||
RICHTEK |
2023+ |
TO223 |
3875 |
全新原厂原装产品、公司现货销售 |
询价 | ||
N/A |
DIP-18 |
5000 |
询价 | ||||
RICHTK |
1822+ |
SOT-223 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
RICHTK |
21+ |
SOT-223 |
65200 |
一级代理/放心采购 |
询价 |
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