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9160

SimplePCIBridging

OXFORD

OXFORD electrical power

9160

Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG

ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG

BELDENBelden Inc.

百通电缆设计科技有限公司

9160

CountersunkTypeHRivets

HeycoHeyco.

海科海科(Heyco)

9160F

CountersunkTypeHRivets

HeycoHeyco.

海科海科(Heyco)

ACTF9160

RFFilter

ACTAdvanced Crystal Technology

先进的晶体先进的晶体技术

BD9160FVM

1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ECS-9160

ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩

ECS-9160P

ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩

EP9160

SMD28PinPassiveDelayLines

SMD28PinPassiveDelayLines

PCA

PCA Electronics, Inc.

FRE9160D

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRE9160H

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRE9160R

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160D

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160H

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160R

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160D

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160R

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYC9160D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYC9160R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
进口原装
23+
TO-3P
1524
全新原装现货
询价
0
23+
TO-3P
50000
全新原装正品现货,支持订货
询价
0
23+
NA/
883
优势代理渠道,原装正品,可全系列订货开增值税票
询价
RICHTEK
22+
TO223
4897
绝对原装!现货热卖!
询价
RICHTEK
23+
TO223
5000
原装正品,假一罚十
询价
RICHTEK
22+
TO223
10000
原装正品优势现货供应
询价
RICHTEK
2023+
TO223
3875
全新原厂原装产品、公司现货销售
询价
N/A
DIP-18
5000
询价
RICHTK
1822+
SOT-223
6852
只做原装正品假一赔十为客户做到零风险!!
询价
RICHTK
21+
SOT-223
65200
一级代理/放心采购
询价
更多PT9160供应商 更新时间2024-6-21 18:06:00