CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：177.66 Kbytes 页数：9 Pages

MITSUMI

三美

IC for CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：89.77 Kbytes 页数：9 Pages

MITSUMI

三美

Silicon N channel IGBT, 360V, 30A

文件：46.53 Kbytes 页数：1 Pages

RENESAS

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Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

文件：158.32 Kbytes 页数：7 Pages

RENESAS

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IP68 rating tested at 1.054kg/sq cm (15lb/sq in) 10m depth for 2 weeks

文件：1.66216 Mbytes 页数：6 Pages

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