CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：177.66 Kbytes 页数：9 Pages

MITSUMI

三美

IC for CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：89.77 Kbytes 页数：9 Pages

MITSUMI

三美

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charage for superior switching performance. Features • –4 A, –20 V. RDS(ON) = 0.065 Ω

文件：111.62 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

HEXFET Power MOSFET

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● U

文件：130.08 Kbytes 页数：7 Pages

IRF

20V P-Channel Enhancement-Mode MOSFET

文件：164.98 Kbytes 页数：3 Pages

TSC

台湾半导体