CEM3258

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,7A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM3258A

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=35mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM3258L

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,6.9A,RDS(ON)=28mW@VGS=10V. RDS(ON)=34mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(ON)=45mW@VGS=2.5V.

CHM3258JPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT7Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

PE3258

CABLEASSEMBLYRG58C/UMINIUHFMALETOMINIUHFMALE

PE3258LF

CABLEASSEMBLYRG58C/UMINIUHFMALETOMINIUHFMALE(LEADFREE)

PST3258

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

PST3258

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

UM3258

Low-VoltageDualSPDTAnalogSwitch