Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：305.92 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7A, RDS(ON) = 28mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：1.12785 Mbytes 页数：4 Pages

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N Channel MOSFET

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7A, RDS(ON) = 24mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：623.96 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.9A, RDS(ON) = 28mW @VGS = 10V. RDS(ON) = 34mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. RDS(ON) = 45mW @VGS = 2.5V.

文件：404.41 Kbytes 页数：5 Pages

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N Channel MOSFET

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华瑞

N Channel MOSFET

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华瑞