Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7A, RDS(ON) = 24mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：623.96 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.9A, RDS(ON) = 28mW @VGS = 10V. RDS(ON) = 34mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. RDS(ON) = 45mW @VGS = 2.5V.

文件：404.41 Kbytes 页数：5 Pages

CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 7 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：551.2 Kbytes 页数：3 Pages

CHENMKO

力勤

CABLE ASSEMBLY RG58C/U MINI UHF MALE TO MINI UHF MALE

文件：208.91 Kbytes 页数：1 Pages

PASTERNACK